کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1634996 | 1007009 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films Influence of post-grown treatments on CuInS2 thin films prepared by sulphurization of Cu-In films](/preview/png/1634996.png)
چکیده انگلیسی
Polycrystalline CuInS2 (CIS) films were prepared by sulphurization of Cu-In films. The surface morphology and phase composition of the as-grown film, the KCN-etched film, and the annealed KCN-etched film were investigated. During the sulphurization, the secondary CuxS phase segregated on the surface of the as-grown films. To improve the crystalline quality of CuInS2 films, a series of post-grown treatments, such as KCN-etching and vacuum annealing KCN-etched films, were performed on the as-grown films. Both as-grown and post-treated films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicated that a CuxS secondary phase segregated on the surface of the as-grown film, which could be removed effectively by KCN etching. After the vacuum annealing treatment, the KCN-etched film had a sphalerite structure with (112) preferred orientation. Meanwhile, the crystalline quality of the CIS film was significantly improved, which provided a novel method to improve the performance of thin film solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 27, Issue 5, October 2008, Pages 490-495
Journal: Rare Metals - Volume 27, Issue 5, October 2008, Pages 490-495
نویسندگان
Youhua YAN, Yingchun LIU, Ling FANG, Haihua ZHAO, Deren LI, Zhichao LU, Shaoxiong ZHOU,