کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1635201 | 1007019 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure studies of the grinding damage in monocrystalline silicon wafers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 26, Issue 1, February 2007, Pages 13-18
Journal: Rare Metals - Volume 26, Issue 1, February 2007, Pages 13-18
نویسندگان
ZHANG Yinxia, KANG Renke, GUO Dongming, JIN Zhuji,