کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1635386 1007024 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition
چکیده انگلیسی
Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 μm. The samples annealed at 700 and 850 °C show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 °C. The possible mechanism was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 25, Issue 6, Supplement 2, December 2006, Pages 30-35
نویسندگان
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