کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1635658 | 1516959 | 2015 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC-Co substrates mainly include the substrate temperature (t), carbon content (Ï), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified that t, Ï and p all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as: t=830 °C, Ï=4.5%, p=4000 Pa, F=800 mL/min.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 25, Issue 3, March 2015, Pages 791-802
Journal: Transactions of Nonferrous Metals Society of China - Volume 25, Issue 3, March 2015, Pages 791-802
نویسندگان
Xin-chang WANG, Zi-chao LIN, Bin SHEN, Fang-hong SUN,