کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1638892 1517012 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of CuI buffer layer prepared by spraying method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Growth of CuI buffer layer prepared by spraying method
چکیده انگلیسی

CuI thin films with nano-scale grains of about 35nm were deposited via spraying method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topographic and optical properties of CuI thin films was investigated. X-ray diffraction results showed that CuI iodine-doped films doped CuI:I2 were in γ-phase of zinc blende structure with (111) preferential plane. Scanning electron microscopy revealed that the microstructure of CuI films depended on the relative amount of doping iodine in the solution. When the iodine doping amount in acetonitrile solution was 0.025 g, the film was uniform and compact, the optical transmittance was 75.4% in the part of visible region and the energy band gap was close to 2.96 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 21, Issue 2, February 2011, Pages 359-363