کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1639192 | 1517013 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary III-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ÎG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ÎG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 21, Issue 1, January 2011, Pages 146-151
Journal: Transactions of Nonferrous Metals Society of China - Volume 21, Issue 1, January 2011, Pages 146-151
نویسندگان
Zhi-cheng YE, Yong-chun SHU, Xue CAO, Liang GONG, Biao PI, Jiang-hong YAO, Xiao-dong XING, Jing-jun XU,