کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1639601 1517043 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of SiCp/Cu composites by Ti-activated pressureless infiltration
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Preparation of SiCp/Cu composites by Ti-activated pressureless infiltration
چکیده انگلیسی

Sessile drop technique was used to investigate the influence of Ti on the wetting behaviour of copper alloy on SiC substrate. A low contact angle of 15° for Cu alloy on SiC substrate is obtained at the temperature of 1 100 °C. The interfacial energy is lowered by the segregation of Ti and the formation of reaction product TiC, resulting in the significant enhancement of wettability. Ti is found to almost completely segregate to Cu/SiC interface. This agrees well with a coverage of 99.8%Ti at the Cu/SiC interface predicted from a simple model based on Gibbs adsorption isotherm. SiCp/Cu composites are produced by pressureless infiltration of copper alloy into Ti-activated SiC preform. The volume fraction of SiC reaches 57%. The densification achieves 97.5%. The bending strength varies from 150 MPa to 250 MPa and increases with decreasing particle size.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 18, Issue 4, August 2008, Pages 872-878