کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1639603 1517043 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pulse-plating electrodeposition and annealing treatment of CuInSe2 films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Pulse-plating electrodeposition and annealing treatment of CuInSe2 films
چکیده انگلیسی

CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from −0.55 to −0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from −0.65 to −0.7 V (vs SCE), a pulse period of 1–9 ms with a duty cycle of 33% and annealing treatment.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 18, Issue 4, August 2008, Pages 884-889