کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1639705 | 1517038 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ablation mechanism of TaC coating fabricated by chemical vapor deposition on carbon-carbon composites
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ablation mechanism of TaC coating fabricated by chemical vapor deposition on carbon-carbon composites Ablation mechanism of TaC coating fabricated by chemical vapor deposition on carbon-carbon composites](/preview/png/1639705.png)
چکیده انگلیسی
Ablation characteristics and mechanism at high temperature for TaC coatings on carbon-carbon composites were investigated by ablation experiments with low power laser and oxyacetylene flame. The results show that the TaC coating is decomposed at the initial stage of laser ablation in atmosphere, and free carbon diffused to the surface, then oxidized to the melt including carbon, oxygen and tantalum. With the increase of ablation time, the melt is oxidized to low valent tantalum-oxide and Ta2O5 is formed finally. During the melt cooling, needle-like crystals of Ta2O5 are precipitated. Between the melt and TaC coating, there exists a diffusion transition layer with thickness of 1-2 μm. The transition layer consists of fine crystals and pores including carbon, oxygen and tantalum. The oxyacetylene flame ablation at 2 300 °C results in the rapid oxidation of TaC and formation of protective liquid films of tantalum oxide on the coating surface, where the liquid film can fill up the cracks and cover the coating. In such case, the oxidation mechanism of TaC is converted to the oxygen solution and diffusion control mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 19, Supplement 3, December 2009, Pages s689-s695
Journal: Transactions of Nonferrous Metals Society of China - Volume 19, Supplement 3, December 2009, Pages s689-s695
نویسندگان
Guo-dong LI, Xiang XIONG, Ke-long HUANG,