Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar+ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.