Effect of crystallization temperature on microstructure and ferroelectric property of Bi3.25Eu0.75Ti3O12 thin films prepared by MOD method

Europium-substituted bismuth titanate (Bi3.25Eu0.75Ti3O12) thin films were deposited on the Pt/Ti/SiO2/Si(111) substrates by metal-organic decomposition (MOD) method using a repeated coating/drying cycle. Effect of crystallization temperature on microstructure of Bi3.25Eu0.75Ti3O12) (BET) thin films was investigated by X-ray diffractometry(XRD), scanning electron microscopy (SEM) and Raman spectroscopy, and ferroelectric property was studied by Precision Workstation Ferroelectric Tester. The crystallinity of BET thin films is improved and the average grain size increases with the crystallization temperature from 600 to 750 °C. Under 9 V applied voltage, the remnant polarization (2Pr) of BET thin films annealed at 700 °C is 50.7 μm/cm2, which is higher than that of the films annealed at 600, 650 and 750°C.