Annealing effect and irradiation properties of HFCVD diamond films

The post-growth treatment of a [100]-oriented diamond film was performed to improve the film quality. The characteristic of post-growth film was investigated by using the RAMAN spectrum and the capacitance-frequency curve. The results show that the resistivities and frequency response enhance after the post-treatments in solution of H2SO4 and H2O2 and an annealing under N2 atmosphere at 500 °C for 60 min. Under a bias voltage of 100 V, the net photocurrent is obtained under 55Fe(5.9 keV) X-rays and 241Am (5.5 MeV) α particles radiation, respectively. The photocurrent increases rapidly at first and becomes stable for the “pumping” effect with the radiation time.