Secondary electron emission induced by channeled relativistic electrons in a (1Â 1Â 0) Si crystal

A new effect that accompanies electrons channeled in a crystal is considered. This phenomenon was previously predicted was called channeling secondary electron emission (CSEE). The exact CSEE cross-section on the basis of using the exact Bloch wave function of electron channeled in a crystal is obtained. The detailed investigation of CSEE cross-section is performed. It is shown that angular distribution of electrons emitted due to CSEE has a complex form.