کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1680821 | 1518741 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Creation of Si nanocrystals from SiO2/Si by He and H ion implantation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cz (1 0 0)-oriented n-type Si wafers with a 220 nm SiO2 surface layer were sequentially implanted with He and H ions at two different energy combinations, and subjected to furnace annealing in the temperature range from 400 to 1000 °C. Si nanocrystals have been created by sequentially He and H ions implanted Si/SiO2 and thermal annealing. High-resolution transmission electron microscopy and atomic force microscopy reveal the formation of Si nanocrystals (NCs) in the SiO2 layer. Photoluminescence (PL) measurements show a broad ultraviolet light emission band, which is mainly made up of two peaks situated at about 300 and 370 nm, respectively. The formation mechanism of Si NCs in the SiO2 layer by sequential implantation of He and H ions and annealing has been proposed in view of the results on surface damage and defect microstructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 276, 1 April 2012, Pages 25-29
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 276, 1 April 2012, Pages 25-29
نویسندگان
X.D. Zhang, C.L. Liu, M.K. Li, Y.J. Gao, D.C. Zhang,