Point defects in 4H–SiC epilayers introduced by neutron irradiation

Electronic properties of radiation damage produced in 4H–SiC by neutron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H–SiC N-epilayers, which formed the low-doped N-base of JBS power diodes, were irradiated with 1 MeV neutrons with fluences ranging from 1.3 × 1013 to 4.0 × 1014 cm−2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy, I–V and C–V measurement. Results show that neutron irradiation introduces different point defects giving rise to acceptor levels lying 0.61/0.69, 0.88, 1.03, 1.08 and 1.55 eV below the SiC conduction band edge. Introduction rates of these centers are ranging from 0.64 to 4.0 cm−1. These defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes. However, the acceptor character of introduced deep levels and their fast introduction deteriorate diode’s ON-state resistance already at fluences exceeding 1 × 1014 cm−2.