کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1680857 | 1518692 | 2014 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Point defects in 4H–SiC epilayers introduced by neutron irradiation Point defects in 4H–SiC epilayers introduced by neutron irradiation](/preview/png/1680857.png)
Electronic properties of radiation damage produced in 4H–SiC by neutron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H–SiC N-epilayers, which formed the low-doped N-base of JBS power diodes, were irradiated with 1 MeV neutrons with fluences ranging from 1.3 × 1013 to 4.0 × 1014 cm−2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy, I–V and C–V measurement. Results show that neutron irradiation introduces different point defects giving rise to acceptor levels lying 0.61/0.69, 0.88, 1.03, 1.08 and 1.55 eV below the SiC conduction band edge. Introduction rates of these centers are ranging from 0.64 to 4.0 cm−1. These defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes. However, the acceptor character of introduced deep levels and their fast introduction deteriorate diode’s ON-state resistance already at fluences exceeding 1 × 1014 cm−2.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 327, 15 May 2014, Pages 124–127