کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1680941 | 1518745 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation damages in CeO2 thin films irradiated with ions having the same nuclear stopping and different electronic stopping powers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In order to characterize a possible modification due to high-density electronic excitation, thin films of CeO2 have been irradiated with 10-MeV Ni and 120-MeV Xe ions, both having the same nuclear stopping powers, while having different electronic stopping powers. The comparison of the fluence dependence of X-ray diffraction (XRD) peaks suggests that the defect production cross section for 120-MeV Xe is nearly one order of magnitude higher than that for 10-MeV Ni. The comparative study demonstrates the prominent damage observed for 120-MeV Xe irradiation is due to high electronic energy deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 272, 1 February 2012, Pages 227–230
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 272, 1 February 2012, Pages 227–230
نویسندگان
N. Ishikawa, K. Takegahara,