کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1680958 1518745 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation
چکیده انگلیسی

The temperature dependant photoluminescence of the Co-doped ZnO thin films, prepared by ion implantation on the MBE grown ZnO thin films followed by swift heavy ion irradiation, were investigated. The phenomenon of negative thermal quenching (NTQ), where the photoluminescence (PL) intensity increases with temperature, in contrast to the usual behavior of decrease in intensity with temperature, has been observed. The I3 peak and the peaks (a, b, c, d, and e), corresponding to t2g and eg levels of the crystal field split Co d orbitals exhibit the NTQ behavior. The NTQ temperature range 35–45 K observed in un-doped ZnO shifts towards lower temperature with the Co doping. The increased number of dopant related and/or the vibrational/rotational resonance states with lower activation energies, from which the thermal excitation of the electrons takes place to the initial state of the PL transition, are responsible for the NTQ behavior.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 272, 1 February 2012, Pages 305–308
نویسندگان
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