Effect of light, medium and heavy ion irradiations on the structural and electrical properties of ZnSe thin films

The effect of irradiations of energetic heavy ion beams on the structural and electrical properties of ZnSe thin films deposited on In2O3:Sn (ITO) coated glass substrate is given. The ZnSe thin films having a thickness of 100 nm were deposited by physical vapour deposition on 200 nm thick ITO coated glass. The ZnSe films were irradiated with 20 MeV carbon, phosphorus and copper ion beams using the 5 MV tandem accelerator at National Centre for Physics, Islamabad. The ion irradiations have shown the improvement in the structural properties in terms of increase in grain size and decrease in the lattice strain. The measurements of photo decay have shown that the decay of the photocurrent has been prolonged in the sample irradiated with carbon ion as compared to the phosphorous and copper irradiated sample.