کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1681426 1010437 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy
چکیده انگلیسی

Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 3186–3190
نویسندگان
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