کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681428 | 1010437 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural disorder in sapphire induced by 90.3Â MeV xenon ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
In our previous work [15], we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3Â MeV xenon ions: a partial disorder creation that saturates at â¼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at â¼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5Â ÃÂ 1012Â ions/cm2. For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 3195-3198
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 3195-3198
نویسندگان
A. Kabir, A. Meftah, J.P. Stoquert, M. Toulemonde, I. Monnet, M. Izerrouken,