Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

The influence of the thermal annealing at 100 and 200 °C on the low-temperature photoluminescence properties of different doses γ-irradiated Cd0.95Zn0.05Te crystals is investigated. It was obtained such thermal annealing induces increasing of the amplitude of donor bound exciton lines and A-centers line which were reduced by preliminary γ-irradiation. Such effect can be explained by the reconstruction of the initial donor defects structure. In this case the reconstruction process is caused by the transmission of the additional thermal energy which leads to the substantial movement of the radiation induced vacancies and interstitials ions with their further annihilation.