کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681768 | 1518651 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transition metal swift heavy ion implantation on 4H-SiC
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
This work reports on the realization of Quantum Ring (QR) and Quantum Dot (QD) like structures on 4H-SiC through SHI implantation and on their Raman studies. 4H-SiC is SHI implanted with Transition Metal (TM) Ni ion at different fluences. It is observed that a vibrational mode emerges as the result of Ni ion implantation. The E2 (TO) and the A1 (LO) are suppressed as the fluence increases. In this paper Raman and AFM studies have been performed at room temperature and the queer anomalies are addressed so new devices can be fabricated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 370, 1 March 2016, Pages 101–106
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 370, 1 March 2016, Pages 101–106
نویسندگان
A. Ashraf Ali, J. Kumar, V. Ramakrishnan, K. Asokan,