کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1681858 1518731 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Damage formation and optical absorption in neutron irradiated SiC
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Damage formation and optical absorption in neutron irradiated SiC
چکیده انگلیسی

The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration determined by RBS increases linearly with the neutron fluence without any saturation in the investigated fluence region. The spectral dependence of the absorption coefficient α at photon energies below 3.2 eV is independent of the neutron fluence and corresponds to that observed in low-fluence ion implanted SiC. An increase of the defect concentration exhibits only in an increase of the absolute value of α. For photon energies above 3.3 eV again an exponential increase of the absorption coefficient is found but with a slope increasing with rising defect concentration. This absorption is assumed to be of the Urbach type. Around 1.56 eV a broad absorption band is observed which is most probably caused by divacancies VSiVC. The defects produced by the neutron irradiation of SiC result in a decrease of the peak intensity and a shift of the position of TO and LO Raman peaks towards lower wave numbers. The latter can be explained by tensile stress due to defects and mass increase of lattice atoms due to neutron capturing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 286, 1 September 2012, Pages 97–101
نویسندگان
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