کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681899 | 1518731 | 2012 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Modification of structure and optical band-gap of nc-Si:H films with ion irradiation Modification of structure and optical band-gap of nc-Si:H films with ion irradiation](/preview/png/1681899.png)
Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 1013, 5.0 × 1013 and 1.0 × 1014 Xe-ions/cm2. The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 1014 Xe-ions/cm2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 286, 1 September 2012, Pages 308–312