کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682022 | 1518710 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Displacement damage dose approach to predict performance degradation of on-orbit GaInP/GaAs/Ge solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Displacement damage dose approach to predict performance degradation of on-orbit GaInP/GaAs/Ge solar cells Displacement damage dose approach to predict performance degradation of on-orbit GaInP/GaAs/Ge solar cells](/preview/png/1682022.png)
چکیده انگلیسی
The displacement damage dose approach for analyzing and modeling the performance degradation of triple-junction GaInP/GaAs/Ge solar cells in a space radiation environment is presented. The irradiation effects of protons and electrons on GaInP/GaAs/Ge solar cells are analysed and then correlated with the displacement damage dose. On this basis, on-orbit expected mission lifetime of GaInP/GaAs/Ge solar cells shielded with silica coverglass at various thicknesses in circular orbits of 5000 km with 60° inclination and 20,000 km with 0° inclination is predicted, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 362–365
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 362–365
نویسندگان
Ming Lu, Rong Wang, Yunhong Liu, Zhao Feng, Zhaolei Han, Chunyu Hou,