کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682026 | 1518710 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature damage formation in ion implanted InP
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Damage formation in ion implanted InP is studied by quasi-in situ Rutherford backscattering spectrometry (RBS) in channelling configuration. Subsequent implantation steps are performed at 15Â K each followed by immediate RBS analysis without changing the environment or the temperature of the sample. 30Â keV He, 150Â keV N and 350Â keV Ca ions were applied. The depth distribution of damage is in good agreement with that calculated with the SRIM code. The evolution of damage at the maximum of the distribution as a function of the ion fluence is described assuming damage formation within single ion impacts and stimulated growth of damage when the collision cascades start to overlap with cross sections Ïd and Ïg, respectively. These cross sections are found to depend on the primary energies deposited in the displacement of lattice atoms and in electronic interactions calculated with the SRIM code. The obtained empirical formulas are capable to represent the experimental results for different III-V compounds implanted at 15Â K with various ion species.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 377-380
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 307, 15 July 2013, Pages 377-380
نویسندگان
E. Wendler, A. Stonert, A. Turos, W. Wesch,