کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682103 | 1518732 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Damage buildup and annealing characteristics in Be-implanted InAs0.93Sb0.07 film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Damage buildup in 80 keV Be-implanted InAs0.93Sb0.07 epitaxial layer grown by liquid epitaxy growth (LPE) with the implantation fluences ranging from 1 Ã 1013 to 4 Ã 1015 cmâ2 have been detailedly investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The implantation-induced nonlinear maximum perpendicular strain εm as a function of the Be fluence was deduced. Microstructural variation created by damage buildup was analyzed. The characteristics of annealing on the lattice damage were also studied. The created damages can be recovered by rapid thermal annealing at 500 °C for samples with the fluence below 1.0 Ã 1015 cmâ2, but nano-sized residual damages still existed when the fluence reaches 4.0 Ã 1015 cmâ2 due to the poor recrystallization of the small disorder region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 285, 15 August 2012, Pages 11-17
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 285, 15 August 2012, Pages 11-17
نویسندگان
Q.W. Wang, C.H. Sun, S.H. Hu, L.M. Wei, J. Wu, Y. Sun, G.J. Hu, G. Yu, X. Chen, H.Y. Deng, N. Dai,