Channeling energy loss and dechanneling of He along axial and planar directions of Si

In the present work, the energy loss and the dechanneling of He ions in the energy of 1.5 MeV and 2 MeV along the 〈1 0 0〉 and 〈1 1 0〉 axial directions as well as the {1 0 0} and {1 1 0} planar directions of Si were studied by the simulation of the channeling Rutherford backscattering spectra. The simulation was done based on the considerations that a fraction of the aligned beam enters the sample as a random component due to the ions scattering from the surface, and the dechanneling starts at the greater penetration depths, xDech. It was presumed that the dechanneling process follows a simple exponential law with a parameter λ which is proportional to the half-thickness. The Levenberg–Marquardt algorithm was used to set the best parameters of energy loss ratio, xDech and λ. The experimental results are well reproduced by this simulation. Differences between various axial and planar channels in the Si crystal and their influence on the energy loss ratio and dechanneling of He ions are described. Moreover, the energy dependence of energy loss ratio and dechanneling of He ions were investigated. It is shown that the dechanneling behavior of ions depends on the energy and energy loss of the ions along a channel. The channeled to random energy loss increases by decreasing ions energy.