Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS

We highlight here the improvements brought by the extended Full Spectrum protocol, presented in previous works and allowing minimization of matrix effects in SiGe matrices compared with more classic protocols. This results in more accurate depth profiles, and thus brings better comprehension of the behavior of intrinsic and doped layers under dry or wet oxidizing.