کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682289 1518744 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Performance of electronic devices submitted to X-rays and high energy proton beams
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Performance of electronic devices submitted to X-rays and high energy proton beams
چکیده انگلیسی

In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor’s off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 273, 15 February 2012, Pages 135–138
نویسندگان
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