کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1682306 | 1518744 | 2012 | 4 صفحه PDF | دانلود رایگان |
First results obtained from electron beam annealed sequentially implanted Pb+ (29 keV) and Se+ (25 keV) ions into a SiO2 matrix are presented. Key results from Rutherford backscattering spectrometry and transmission electron microscopy investigations are: (1) Pb and Se atoms are found to bond in the SiO2 matrix during implantation, forming into nanoclusters even prior to the annealing step, (2) Pb and Se atoms are both present in the sample after annealing at high temperature (T = 760 °C, t = 45 min) and form into PbSe nanoclusters of varying sizes within the implanted region, and (3) the broader concentration profile of implanted Se creates a number of secondary features throughout the SiO2 film, including voids and hollow shell Se nanoclusters. A sequential ion implantation approach has several advantages: selected areas of nanocrystals can be formed for integrated circuits, the technique is compatible with present silicon processing technology, and the nanocrystals are embedded in an inert matrix – making them highly durable. In addition, a higher concentration of nanocrystals is possible than with conventional glass melt techniques.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 273, 15 February 2012, Pages 199–202