کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682328 | 1010467 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the electronic structures of oxygen doped in LiBaF3 crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The most likely substituting positions of impurity oxygen ions in LiBaF3 crystals are studied using the general utility lattice program (GULP). The calculated results indicate that the main defect model is [OF′+VF·] in the O:LiBaF3 crystal. The electronic structures of the LiBaF3 crystal with the defect [OF′+VF·] are calculated using the DV-Xα method. It can be concluded from the electronic structures that the LiBaF3 crystal with the defect [OF′+VF·] will exhibit a 217–280 nm absorption band and the impurity oxygen will decrease core-valence luminescence yield.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 15, 1 August 2009, Pages 2467–2470
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 15, 1 August 2009, Pages 2467–2470
نویسندگان
Hailing Qiao, Tingyu Liu, Qiren Zhang, Fan Cheng, Xiuwen Zhou,