کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682404 1010469 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons
چکیده انگلیسی

Evolution of the non-radiative and radiative recombination in GaN and CdS 2.5–20 μm thick layers has been examined by the in situ measurements of the 1.6 MeV proton induced luminescence and laser excited photoconductivity characteristics. The introduction rate of radiation defects has been evaluated by the comparative analysis of the laser and proton beam induced luminescence for the examined GaN and CdS layers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 365, Part A, 15 December 2015, Pages 159–162
نویسندگان
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