کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682510 | 1010473 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Xe-implanted zirconium oxycarbide studied by variable energy positron beam
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The effect of annealing on defects and the formation of Xe bubbles were investigated in zirconium oxycarbide implanted with 800-keV136Xe2+ ions at two fluences 1 × 1015 and 1 × 1016 Xe/cm2. Doppler broadening technique combined with slow positron beam was used. The analysis of the S depth profiles and S–W maps revealed that in the as-implanted samples at both fluences Xe bubbles are not formed. The post-implantation annealing of the samples implanted at 1 × 1016 Xe/cm2 caused formation of Xe bubbles. The response of the lower implantation dose samples to this post implantation annealing was found rather complicated and is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 23, 1 December 2011, Pages 2709–2714
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 23, 1 December 2011, Pages 2709–2714
نویسندگان
N. Djourelov, G. Gutierrez, H. Marinov, E. Popov, N. Toulhoat, N. Moncoffre, Y. Pipon, P. Nédélec,