کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1682834 | 1518743 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
ZnO crystals were implanted by Tm+ ions at 500 keV with different doses at room temperature. The lattice damage tends to saturate at dose higher than 3 Ã 1015 ions cmâ2, indicating a strong irradiation resistance of ZnO. Post-implant annealing at temperature from 800 to 1050 °C is performed to activate Tm ion optically. Annealing higher than 950 °C resulted in out-diffusion of Tm ions. Photoluminescence was measured at room temperature with UV and green excitation, luminescence of transition 3H4 â 3H6 from Tm3+ and concentration quenching behavior is observed in samples suffering 800 °C annealing for 30 min. Typical emission bands from ZnO crystal are detected in both virgin and the implanted samples. The results show that the implanted Tm+ seems serving as deep traps to contribute to the red band emission.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 274, 1 March 2012, Pages 172-176
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 274, 1 March 2012, Pages 172-176
نویسندگان
Xianbing Ming, Fei Lu, Ziwu Ji, Ming Chen, Jinhua Zhao, Jiaojian Yin, Yujie Ma,