کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682860 1010484 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal spike analysis of ion-induced tracks in semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Thermal spike analysis of ion-induced tracks in semiconductors
چکیده انگلیسی

Track data reported in InP and GaAs are analyzed according to the analytical thermal spike model (ATSM) and good agreement with the predictions is found. The Gaussian width of the thermal spike is a(0) ≈ 11 nm compared to a(0) = 4.5 nm in insulators. When the ion velocity vp is high (E > 8 MeV/nucleon), a similar fraction of the electronic stopping power Se is transformed into thermal energy of the spike in insulators and semiconductors. The results show that – compared to insulators – vp affects only slightly the track sizes in semiconductors, which is explained qualitatively by the Coulomb explosion mechanism. The reported correlation between the bandgap energy Eg and a(0) is completed with new data. The results of previous analyses of ion-induced tracks in InP by ATSM are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 19, 1 October 2011, Pages 2075–2079
نویسندگان
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