کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1682927 | 1010487 | 2011 | 10 صفحه PDF | دانلود رایگان |
The article presents the results on the investigation of the channeling and volume reflection effects in a bent silicon crystal with 13 GeV/c positive and negative hadrons (mainly π+, p and π−) at the CERN PS T9 line. In particular, this is the first study carried out on volume reflection at this energy providing a deflection angle of 69.4 ± 4.7 μrad and an efficiency of 92.7 ± 3.3%, with positive particles.The measurements have been carried out on a bent silicon strip crystal, using a high precision tracking system based on microstrip silicon detectors; this setup is allowed to trigger on the desired beam portion and to select the incoming particle angular range. The article presents a brief introduction on the bent crystal phenomena, the experimental setup and the results of the measurements.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 6, 15 March 2011, Pages 612–621