کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683199 | 1518682 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of swift heavy-ion irradiation on helium-ion-implanted silicon
ترجمه فارسی عنوان
اثرات تابش شدید یونهای سنگین بر روی سیلیکون هلیم-یون اعمال شده
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. ã1Â 0Â 0ã-oriented silicon wafers were implanted with 30Â keV helium to a dose of 3Â ÃÂ 1016Â He+/cm2 at 600Â K. Subsequently, the helium-implanted Si wafers were irradiated with 792Â MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073Â K for 30Â min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 337, 15 October 2014, Pages 21-26
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 337, 15 October 2014, Pages 21-26
نویسندگان
B.S. Li, Y.Y. Du, Z.G. Wang, T.L. Shen, Y.F. Li, C.F. Yao, J.R. Sun, M.H. Cui, K.F. Wei, H.P. Zhang, Y.B. Shen, Y.B. Zhu, L.L. Pang,