Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

The effect of sputtering yield enhancement by implantation of noble gases into solid silicon is investigated with the Monte Carlo program SDTrimSP. The process of diffusion is incorporated into the program to describe the outgassing of noble gases. The bombardment of Si with He, Ne, Ar, Xe at normal incidence is studied in the energy range from 1 to 500 keV. Good agreement of the calculated results with experimental data is found.