Optical properties of InxGa1−xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga+ ions with fluences of 1 × 1016–1.5 × 1017 cm−2 followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga+-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the InxGa1−xP phase is formed at a critical fluence of 7 × 1016 cm−2. The newly grown phase was identified with the appearance of Ga rich TOInP and In rich TOGaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.