Electron beam radiation effects on electrical and optical properties of pure and aluminum doped tin oxide films

The effects of electron beam radiation on electrical and optical properties of undoped (SnO2) and aluminum doped tin oxide (SnO2:Al) films are investigated. Single and multi-layered films were grown using hydro-alcoholic solution and spin coating technique under optimum deposition conditions. Exposure to electron beam radiation causes increase in the sheet resistance of both SnO2 and SnO2:Al films. A blue shift in the absorption edge in the case of SnO2 films and red shift in the case of aluminium doped SnO2 films were observed after e-beam irradiation. The extent of deviation in the electrical properties varies with doping concentrations.