کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683927 | 1518755 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion beam synthesis of SiC by C implantation into SIMOX(1Â 1Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30-45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO2 cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O2), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 Ã 1016 cmâ2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as â¼2.3 Ã 1017 cmâ2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 Ã 1017 cmâ2), a whole stoichiometric layer is obtained, with reduction of structural quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1281-1284
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1281-1284
نویسندگان
R.M.S. dos Reis, R.L. Maltez, H. Boudinov,