کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683930 | 1518755 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of Si-C-N compounds in silicon carbide by ion implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The chemical variation and depth profile of silicon carbide implanted with nitrogen and overgrown with epitaxial layer has been studied using X-ray photoelectron spectroscopy (XPS). The results of this study have been supplemented by transmission electron microscopy (TEM) imaging and electron energy loss-spectroscopy (EELS) in an attempt to correlate the chemical and structural information. Our results indicate that the nitrogen implantation into silicon carbide results in the formation of the Si-C-N layer. XPS revealed significant change in the bonding structure and chemical states in the implanted region. XPS results can be interpreted in terms of the silicon nitride and silicon carbonitride nanocrystals formation in the implanted region which is supported by the electron microscopy and spectroscopy results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1294-1298
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1294-1298
نویسندگان
Alexandra A. Suvorova, Tim Nunney, Alexander V. Suvorov,