کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683947 | 1518755 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure](/preview/png/1683947.png)
Growth of InSb nanocrystals at the Si/SiO2 bonding interface of silicon-on-insulator (SOI) structures has been studied as a function of the annealing temperature. SOI structures with the ion implanted regions above and below the bonding interface were produced as a result of the hydrogen transfer of the Sb+ ion implanted silicon layer from first silicon substrate to the In+ ion implanted SiO2 layer thermally-grown on the second silicon substrate. Rutherford backscattering spectrometry and high-resolution transmission electron microscopy (XTEM) were used to study the properties of the prepared structures. Up-hill diffusion of In and Sb atoms from the implantation regions toward the bonding interface as well as subsequent interface-mediated growth of InSb nanocrystals were observed as the annealing temperature achieved 1100 °C. The strain minimizing orientations of the Si and InSb lattice heteropairs were obtained from XTEM analysis of the grown nanocrystals.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8–9, 1 May 2009, Pages 1360–1363