کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1683972 | 1518755 | 2009 | 4 صفحه PDF | دانلود رایگان |
In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016–1 × 1017 cm−2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm−2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8–9, 1 May 2009, Pages 1464–1467