کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1683974 | 1518755 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice location and annealing studies of Hf implanted CaF2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Hafnium ions were implanted into calcium fluoride single crystals. The lattice damage introduced by the implantation was investigated with the Rutherford backscattering (RBS) channelling technique. The lattice location of the implanted ions was determined by performing channelling measurements for the ã1 1 0ã crystal direction. A comparison of the angular scan with Monte Carlo simulations leads to the conclusion that >90% of the Hf ions are on Ca sites directly after implantation. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. Perturbed angular correlation (PAC) measurements with 181Hf(181Ta) show quadrupole interactions with νQ1 = 300(3) MHz (η = 0.00), νQ2 = 1285(13) MHz (η = 0.43) and νQ3 = 1035(10) MHz (η = 0.00) after annealing up to 1200 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1472-1475
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issues 8â9, 1 May 2009, Pages 1472-1475
نویسندگان
Thomas Geruschke, Katharina Lorenz, Eduardo Alves, Reiner Vianden,