Transient processes induced by heavy projectiles in silicon

The thermal spike model developed for the electronic stopping power regime is extended to consider both ionization and nuclear energy loss processes of the projectile as electronic and atomic heat distinct sources. The time and space dependencies of the lattice and electron temperatures near the projectile trajectory are calculated and discussed for different ions in silicon, at room and cryogenic temperatures, taking into account the peculiarities of electron-phonon interaction in both domains. The model developed contributes to the understanding of transient microscopic processes immediately after the projectile interaction in the target.