کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1684173 1010524 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the origin of the LEIS signal in TOF- and in ESA-LEIS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
On the origin of the LEIS signal in TOF- and in ESA-LEIS
چکیده انگلیسی
The ion fraction analysis of 4He+ ions backscattered from various faces of copper single crystals is performed by using time-of-flight (TOF) and electrostatic analyzer (ESA) low-energy ion scattering (LEIS) techniques. When an experiment that integrates over 2π azimuth (typical ESA-LEIS setup) is used, the yield of ions backscattered from the Cu(1 1 0) surface may be given by projectiles penetrated much deeper than just one or two monolayers. The threshold energy for reionization processes for 4He+ and Cu found earlier by TOF-LEIS is experimentally confirmed by ESA-LEIS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 4, February 2009, Pages 634-637
نویسندگان
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