کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684173 | 1010524 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the origin of the LEIS signal in TOF- and in ESA-LEIS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: On the origin of the LEIS signal in TOF- and in ESA-LEIS On the origin of the LEIS signal in TOF- and in ESA-LEIS](/preview/png/1684173.png)
چکیده انگلیسی
The ion fraction analysis of 4He+ ions backscattered from various faces of copper single crystals is performed by using time-of-flight (TOF) and electrostatic analyzer (ESA) low-energy ion scattering (LEIS) techniques. When an experiment that integrates over 2Ï azimuth (typical ESA-LEIS setup) is used, the yield of ions backscattered from the Cu(1Â 1Â 0) surface may be given by projectiles penetrated much deeper than just one or two monolayers. The threshold energy for reionization processes for 4He+ and Cu found earlier by TOF-LEIS is experimentally confirmed by ESA-LEIS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 4, February 2009, Pages 634-637
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 267, Issue 4, February 2009, Pages 634-637
نویسندگان
S.N. Markin, D. Primetzhofer, P. Bauer,