Defect studies in ion irradiated AlGaN

Defects created in Al0.4Ga0.6N crystals by 320 keV Ar ion irradiation were studied using Rutherford Backscattering Spectroscopy/Channeling (RBS/C) and Transmission Electron Microscopy (TEM) techniques. One of the main aims of the work was to use a revised version of McChasy, a Monte-Carlo simulation code of backscattering spectra, for the analysis of experimental results obtained for a dislocation-containing crystal. TEM was used to get a better insight into dislocation and dislocation loop geometries in order to restrict the range of parameters used in simulations. RBS/C analysis was performed in a 1.5–3 MeV energy range to check if MC simulations correctly reproduce backscattering spectra at different energies.