کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684316 | 1010526 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Furthering the understanding of ion-irradiation-induced electrical isolation in wide band-gap semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
A model recently developed for ion-irradiation-induced electrical isolation of GaN is extended to describe this process in other wide band-gap semiconductors. In our model, a decrease in the concentration of free carriers responsible for isolation is assumed to be due to the formation of complexes of ion-beam-generated point defects with shallow donor or acceptor dopants. Results show that this model can adequately describe experimental data for electrical isolation not only in n-GaN but also in n-ZnO as well as in n- and p-InGaP.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 243, Issue 1, January 2006, Pages 79–82
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 243, Issue 1, January 2006, Pages 79–82
نویسندگان
A.I. Titov, P.A. Karaseov, S.O. Kucheyev,